VISHAY · FETs & Power MOSFETs · MPN SI7190DP-T1-GE3
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| Drain to Source Voltage | 250V |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 61.5W |
| RDS(on) | 118mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.214nF |
250V 4V 61.5W 118mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS