VISHAY SI7174DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7174DP-T1-GE3

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Specifications

Drain to Source Voltage75V
Gate Charge(Qg)72nC@10V
Output Capacitance(Coss)345pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.77nF
TypeN-Channel

Technical details

N-Channel 75V 60A 104W Surface Mount PowerPAK-SO-8

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