VISHAY · FETs & Power MOSFETs · MPN SI7172DP-T1-GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 77nC@10V |
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 96W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 76mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.25nF |
200V 4V 96W 76mΩ@6V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS