VISHAY SI7172ADP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SI7172ADP-T1-RE3

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)17.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)8.3pF
RDS(on)80mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)1.11nF
TypeN-Channel

Technical details

200V 17.2A 4V 80mΩ@7.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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