VISHAY · FETs & Power MOSFETs · MPN SI7164DP-T1-GE3
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| Gate Charge(Qg) | 75nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 425pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 6.25mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.83nF |
| Type | N-Channel |
60V 60A 4.5V 104W 6.25mΩ@10V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS