VISHAY · FETs & Power MOSFETs · MPN SI7157DP-T1-GE3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 305nC@4.5V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 61.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 415pF |
| RDS(on) | 3.2mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 22nF |
| Type | P-Channel |
P-Channel 20V 60A 61.25W Surface Mount PowerPAK-SO-8