VISHAY · FETs & Power MOSFETs · MPN SI7155DP-T1-GE3-A
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| Gate Charge(Qg) | 161nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF |
| RDS(on) | 4.6mΩ@4.5V |
| Type | P-Channel |
40V 100A 2.3V 125W 4.6mΩ@4.5V P-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS