VISHAY SI7153DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7153DN-T1-GE3

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Specifications

Gate Charge(Qg)62nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)430pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.7W
Reverse Transfer Capacitance (Crss@Vds)396pF
RDS(on)9.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.6nF
TypeP-Channel

Technical details

P-Channel 30V 18A 3.7W Surface Mount PowerPAK1212-8

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