VISHAY · FETs & Power MOSFETs · MPN SI7149DP-T1-GE3
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| Gate Charge(Qg) | 51nC |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 23.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 5.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 765pF |
| RDS(on) | 5.2mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.59nF |
P-Channel 30V 23.7A 5.2W Surface Mount PowerPAKSO-8