VISHAY SI7148DP-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7148DP-T1-E3

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Specifications

Gate Charge(Qg)100nC@10V
Drain to Source Voltage75V
Output Capacitance(Coss)370pF
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)196pF
RDS(on)14.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

75V 28A 2.5V 96W 14.5mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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