VISHAY SI7145DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7145DP-T1-GE3

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Output Capacitance(Coss)1.335nF
Current - Continuous Drain(Id)60A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)1.57nF
RDS(on)3.75mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 30V 60A 125W Surface Mount PowerPAKSO-8

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