VISHAY · FETs & Power MOSFETs · MPN SI7143DP-T1-GE3
No reviews yet — be the first to review VISHAY SI7143DP-T1-GE3.
| Gate Charge(Qg) | 71nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 385pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 35.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 322pF |
| RDS(on) | 18.6mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.23nF |
| Type | P-Channel |
30V 35A 2.8V 35.7W 18.6mΩ@4.5V 1 P-Channel P-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS