VISHAY SI7141DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7141DP-T1-GE3

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)400nC@10V
Output Capacitance(Coss)2.6nF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)2.6nF
RDS(on)1.9mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)14.3nF
TypeP-Channel

Technical details

P-Channel 20V 60A 104W Surface Mount PowerPAKSO-8

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