VISHAY · FETs & Power MOSFETs · MPN SI7139DP-T1-GE3
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| Gate Charge(Qg) | 146nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 695pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 670pF |
| RDS(on) | 9mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.23nF |
| Type | P-Channel |
30V 40A 2.5V 48W 9mΩ@4.5V 1 P-Channel P-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS