VISHAY SI7137DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7137DP-T1-GE3

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Specifications

Gate Charge(Qg)188nC
Drain to Source Voltage20V
Current - Continuous Drain(Id)42A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))500mV
Pd - Power Dissipation6.25W
Reverse Transfer Capacitance (Crss@Vds)390pF
RDS(on)1.95mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)20nF
TypeP-Channel

Technical details

P-Channel 20V 42A 6.25W Surface Mount PowerPAKSO-8

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