VISHAY SI7135DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7135DP-T1-GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)250nC@10V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)1.125nF
RDS(on)6.2mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)8.65nF
TypeP-Channel

Technical details

P-Channel 30V 60A 104W Surface Mount PowerPAKSO-8

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