VISHAY SI7123DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7123DN-T1-GE3

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Specifications

Gate Charge(Qg)90nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)542pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)57pF
RDS(on)18.9mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)3.729nF
TypeP-Channel

Technical details

P-Channel 20V 16A 3.8W Surface Mount PowerPAK1212-8

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