VISHAY SI7121ADN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7121ADN-T1-GE3

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Specifications

Configuration-
Gate Charge(Qg)50nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)245pF
Current - Continuous Drain(Id)18A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation27.8W
Reverse Transfer Capacitance (Crss@Vds)212pF
RDS(on)26mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.87nF

Technical details

30V 18A 2.5V 27.8W 26mΩ@4.5V 1 P-Channel P-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS

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