VISHAY · FETs & Power MOSFETs · MPN SI7120ADN-T1-GE3
No reviews yet — be the first to review VISHAY SI7120ADN-T1-GE3.
| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 9.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF |
| RDS(on) | 21mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 30pF |
60V 9.5A 2.5V 2.4W 21mΩ@10V 1 N-channel PowerPAK1212-8 Single FETs, MOSFETs RoHS