VISHAY · FETs & Power MOSFETs · MPN SI7119DN-T1-GE3
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| Gate Charge(Qg) | 10.6nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 86pF |
| Current - Continuous Drain(Id) | 1.2A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 1.05Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 666pF |
| Type | P-Channel |
P-Channel 200V 1.2A 3.7W Surface Mount PowerPAK1212-8