VISHAY · FETs & Power MOSFETs · MPN SI7117DN-T1-GE3
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| Gate Charge(Qg) | 7.7nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 30pF |
| Current - Continuous Drain(Id) | 1.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 1.2Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 510pF |
| Type | P-Channel |
P-Channel 150V 1.1A 3.2W Surface Mount PowerPAK1212-8