VISHAY SI7117DN-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7117DN-T1-E3

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Specifications

Configuration-
Gate Charge(Qg)7.7nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)2.17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation12.5W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)1.3Ω@6V
Number1 P-Channel
Input Capacitance(Ciss)510pF

Technical details

P-Channel 150V 2.17A 12.5W Surface Mount PowerPAK1212-8

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