VISHAY SI7116DN-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI7116DN-T1-E3

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Specifications

Gate Charge(Qg)23nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)16.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)10mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 40V 16.4A 3.8W Surface Mount PowerPAK1212-8

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