VISHAY · FETs & Power MOSFETs · MPN SI7114DN-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 19nC@4.5V |
| Current - Continuous Drain(Id) | 18.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.6pF |
| RDS(on) | 7.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.5nF |
30V 18.3A 3V 3.8W 7.5mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS