VISHAY · FETs & Power MOSFETs · MPN SI7114DN-T1-E3
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| Gate Charge(Qg) | 19nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 11.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 7.5mΩ@10V |
| Number | 1 N-channel |
N-Channel 30V 11.7A 1.5W Surface Mount PowerPAK1212-8