VISHAY · FETs & Power MOSFETs · MPN SI7113DN-T1-E3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 55nC@10V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 80pF |
| Current - Continuous Drain(Id) | 13.2A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 145mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.48nF |
100V 13.2A 3V 52W 145mΩ@4.5V 1 P-Channel P-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS