VISHAY · FETs & Power MOSFETs · MPN SI7113ADN-T1-GE3
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| Gate Charge(Qg) | 5.65nC@4.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 10.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 27.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 132mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 515pF |
P-Channel 100V 10.8A 27.8W Surface Mount PowerPAK1212-8