VISHAY SI7112DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7112DN-T1-GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)27nC@4.5V
Output Capacitance(Coss)340pF
Current - Continuous Drain(Id)17.8A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)8.2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.61nF
TypeN-Channel

Technical details

N-Channel 30V 17.8A 20W Surface Mount PowerPAK1212-8

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