VISHAY · FETs & Power MOSFETs · MPN SI7111EDN-T1-GE3
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| Gate Charge(Qg) | 30.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 33.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 395pF |
| RDS(on) | 8.55mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.86nF |
P-Channel 30V 60A 33.3W Surface Mount PowerPAK-1212-8