VISHAY · FETs & Power MOSFETs · MPN SI7108DN-T1-E3
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| Gate Charge(Qg) | 30nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 4.9mΩ@10V |
| Number | 1 N-channel |
20V 14A 2V 1.5W 4.9mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS