VISHAY · FETs & Power MOSFETs · MPN SI7106DN-T1-GE3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 27nC@4.5V |
| Current - Continuous Drain(Id) | 19.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 3.8W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 6.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
20V 19.5A 1.5V 3.8W 6.2mΩ@4.5V 1 N-channel Single FETs, MOSFETs RoHS