VISHAY · FETs & Power MOSFETs · MPN SI7104DN-T1-E3
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| Drain to Source Voltage | 12V |
|---|---|
| Gate Charge(Qg) | 70nC@10V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 3.8W;52W |
| Reverse Transfer Capacitance (Crss@Vds) | 520pF |
| RDS(on) | 3.7mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.8nF |
12V 35A 1.8V 3.7mΩ@4.5V 1 N-channel Single FETs, MOSFETs RoHS