VISHAY SI7101DN-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI7101DN-T1-GE3

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Specifications

Gate Charge(Qg)48nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)442pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)408pF
RDS(on)13mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.595nF
TypeP-Channel

Technical details

P-Channel 30V 35A 52W Surface Mount PowerPAK1212-8

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