VISHAY SI6968BEDQ-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI6968BEDQ-T1-E3

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Specifications

ConfigurationCommon Drain
Current - Continuous Drain(Id)6.5A
RDS(on)22mΩ@4.5V
Pd - Power Dissipation1.5W
Gate Threshold Voltage (Vgs(th))1.6V
Drain to Source Voltage20V
Number2 N-Channel
Gate Charge(Qg)12nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 20V 6.5A 1.5W Surface Mount TSSOP-8

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