VISHAY · FETs & Power MOSFETs · MPN SI6926ADQ-T1-E3
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| Current - Continuous Drain(Id) | 3.6A |
|---|---|
| Pd - Power Dissipation | 640mW |
| RDS(on) | 30mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 10.5nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 20V 3.6A 0.64W Surface Mount TSSOP-8