VISHAY · FETs & Power MOSFETs · MPN SI6913DQ-T1-GE3
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| Current - Continuous Drain(Id) | 5.8A |
|---|---|
| Pd - Power Dissipation | 1.14W |
| RDS(on) | 37mΩ@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Drain to Source Voltage | 12V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 18.5nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | - |
P-Channel 12V 5.8A 1.14W Surface Mount TSSOP-8