VISHAY · FETs & Power MOSFETs · MPN SI6913DQ-T1-BE3
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| Drain to Source Voltage | 12V |
|---|---|
| Gate Charge(Qg) | 28nC@4.5V |
| Current - Continuous Drain(Id) | 5.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 1.14W |
| RDS(on) | 37mΩ@1.8V |
| Type | P-Channel |
12V 5.8A 900mV 1.14W 37mΩ@1.8V P-Channel TSSOP-8 Single FETs, MOSFETs RoHS