VISHAY · FETs & Power MOSFETs · MPN SI6562CDQ-T1-GE3
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| Current - Continuous Drain(Id) | 6.7A;6.1A |
|---|---|
| RDS(on) | 22mΩ@4.5V |
| Pd - Power Dissipation | 1.6W;1.7W |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 850pF |
| Gate Charge(Qg) | 23nC@10V |
| Operating Temperature | -55℃~+150℃ |
N-Channel+P-Channel Array 20V 6.7A 6.1A 1.6W 1.7W Surface Mount TSSOP-8