VISHAY · FETs & Power MOSFETs · MPN SI6562CDQ-T1-BE3
No reviews yet — be the first to review VISHAY SI6562CDQ-T1-BE3.
| Current - Continuous Drain(Id) | 6.7A |
|---|---|
| RDS(on) | 36mΩ@2.5V |
| Pd - Power Dissipation | 1.6W |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Type | N-Channel + P-Channel |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 850pF;1.2nF |
| Gate Charge(Qg) | 11nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
6.7A 36mΩ@2.5V 1.6W 1.5V 1 N-Channel + 1 P-Channel TSSOP-8 FET, MOSFET Arrays RoHS