VISHAY SI6423DQ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI6423DQ-T1-GE3

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)110nC@5V
Current - Continuous Drain(Id)9.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)14mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 12V 9.5A 1.5W Surface Mount TSSOP-8

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