VISHAY · FETs & Power MOSFETs · MPN SI6423DQ-T1-E3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 110nC@5V |
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 9.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 8.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
12V 9.5A 400mV 1.5W 8.5mΩ@4.5V 1 P-Channel TSSOP-8 Single FETs, MOSFETs RoHS