VISHAY SI6423DQ-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI6423DQ-T1-BE3

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)110nC@5V
Current - Continuous Drain(Id)9.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)8.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)-

Technical details

12V 9.5A 400mV 1.5W 8.5mΩ@4.5V 1 P-Channel TSSOP-8 Single FETs, MOSFETs RoHS

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