VISHAY · FETs & Power MOSFETs · MPN SI6423ADQ-T1-GE3
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| Gate Charge(Qg) | 63nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 540pF |
| Current - Continuous Drain(Id) | 12.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 22.7mΩ@1.8V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.875nF |
| Type | P-Channel |
20V 12.5A 1V 1.5W 22.7mΩ@1.8V 1 P-Channel P-Channel TSSOP-8 Single FETs, MOSFETs RoHS