VISHAY SI6415DQ-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI6415DQ-T1-E3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)70nC@10V
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.5W
RDS(on)19mΩ@10V
Number1 P-Channel
TypeP-Channel

Technical details

P-Channel 30V 6.5A 1.5W Surface Mount TSSOP-8

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