VISHAY SI6415DQ-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI6415DQ-T1-BE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)70nC@10V
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.5W
RDS(on)19mΩ@10V
Number1 P-Channel

Technical details

30V 6.5A 1V 1.5W 19mΩ@10V 1 P-Channel TSSOP-8 Single FETs, MOSFETs RoHS

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