VISHAY · FETs & Power MOSFETs · MPN SI5935CDC-T1-E3
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| Current - Continuous Drain(Id) | 3.8A |
|---|---|
| RDS(on) | - |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 455pF |
| Gate Charge(Qg) | 6.2nC@5V |
| Operating Temperature | -55℃~+150℃ |
3.8A 2W 400mV 2 P-Channel ChipFET1206-8 FET, MOSFET Arrays RoHS