VISHAY · FETs & Power MOSFETs · MPN SI5922DU-T1-GE3
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| Current - Continuous Drain(Id) | 9A |
|---|---|
| Pd - Power Dissipation | 10.4W |
| RDS(on) | 24.5mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 765pF |
| Gate Charge(Qg) | 7.1nC@10V |
| Operating Temperature | -55℃~+150℃ |
9A 10.4W 24.5mΩ@4.5V 2.2V 2 N-Channel PowerPAK FET, MOSFET Arrays RoHS