VISHAY · FETs & Power MOSFETs · MPN SI5908DC-T1-E3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 7.5nC@4.5V |
| Current - Continuous Drain(Id) | 5.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 40mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 700pF |
N-Channel Array 20V 5.9A 2.1W Surface Mount SMD-8P