VISHAY · FETs & Power MOSFETs · MPN SI5902BDC-T1-GE3
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| Gate Charge(Qg) | 7nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.12W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 100mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
30V 4A 3V 3.12W 100mΩ@4.5V 2 N-Channel N-Channel ChipFET1206-8 Single FETs, MOSFETs RoHS