VISHAY · FETs & Power MOSFETs · MPN SI5515CDC-T1-GE3
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| Current - Continuous Drain(Id) | 49A |
|---|---|
| Pd - Power Dissipation | 3.1W |
| RDS(on) | 156mΩ@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Drain to Source Voltage | 20V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 632pF |
| Gate Charge(Qg) | 6.5nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 80pF |
49A 3.1W 156mΩ@1.8V 800mV 1 N-Channel + 1 P-Channel ChipFET1206-8 FET, MOSFET Arrays RoHS